Part Number Hot Search : 
C2000 S1608 UTC1316 1N4740 2SC40 G19AV MM1503 OA180
Product Description
Full Text Search
 

To Download RURD660S Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 RURD660, RURD660S
Data Sheet January 2000 File Number 3750.2
6A, 600V Ultrafast Diodes
The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics (trr < 55ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Formerly developmental type TA49038.
Features
* Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <55ns * Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V * Avalanche Energy Rated * Planar Construction
Applications
* Switching Power Supplies * Power Switching Circuits * General Purpose
Ordering Information
PART NUMBER RURD660 RURD660S PACKAGE TO-251 TO-252 BRAND RUR660 RUR660
Packaging
JEDEC STYLE TO-251
ANODE CATHODE (FLANGE) CATHODE
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252 variant in the tape and reel, i.e., RURD660S9A.
Symbol
K
JEDEC STYLE TO-252
CATHODE (FLANGE)
A
CATHODE ANODE
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RURD660 RURD660S UNITS V V V A A A W mJ oC
oC oC
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 155oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ Maximum Lead Temperature for Soldering Leads at 0.063 in. (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TPKG
600 600 600 6 12 60 50 10 -65 to 175 300 260
1
1-888-INTERSIL or 321-724-7143 | Copyright
(c) Intersil Corporation 2000
RURD660, RURD660S
Electrical Specifications
SYMBOL VF TC = 25oC, Unless Otherwise Specified TEST CONDITION IF = 6A IF = 6A, TC = 150oC IR VR = 600V VR = 600V, TC = 150oC trr IF = 1A, dIF/dt = 200A/s IF = 6A, dIF/dt = 200A/s ta tb QRR CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction capacitance. RJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. IF = 6A, dIF/dt = 200A/s IF = 6A, dIF/dt = 200A/s IF = 6A, dIF/dt = 200A/s VR = 10V, IF = 0A MIN TYP 28 16 150 25 MAX 1.5 1.2 100 500 55 60 3 UNITS V V A A ns ns ns ns nC pF
oC/W
Typical Performance Curves
30 500 IR , REVERSE CURRENT (A) 100 175oC
IF, FORWARD CURRENT (A)
10
10 1
100oC
100oC 175oC 1 25oC
0.1 25oC 0.01
0.5 0 0.5 1 1.5 2 2.5 VF, FORWARD VOLTAGE (V)
0.001 0 100 200 300 400 500 600 VR , REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
RURD660, RURD660S Typical Performance Curves
50 TC = 25oC, dIF/dt = 200A/s t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 40 trr 30 ta 20 tb 75
(Continued)
90 TC = 100oC, dIF/dt = 200A/s
60 45 30
trr
ta tb
10
15 0 0.5
0 0.5
1 IF, FORWARD CURRENT (A)
6
1 IF, FORWARD CURRENT (A)
6
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
TC = 175oC, dIF/dt = 200A/s t, RECOVERY TIMES (ns) 80 trr 60
IF(AV) , AVERAGE FORWARD CURRENT (A)
100
6 5 DC 4 SQ. WAVE 3 2 1 0 145
40
ta tb
20
0 0.5
1 IF, FORWARD CURRENT (A)
6
150
155
160
165
170
175
TC , CASE TEMPERATURE (oC)
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
75 CJ , JUNCTION CAPACITANCE (pF)
60
45
30
15
0 0 50 100 150 200 VR , REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
3
RURD660, RURD660S Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L
DUT RG VGE t1 t2
CURRENT SENSE + VDD 0
IF
dIF dt ta
trr tb
IGBT
-
0.25 IRM IRM
FIGURE 8. trr TEST CIRCUIT
I = 1A L = 20mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV
FIGURE 9. trr WAVEFORMS AND DEFINITIONS
VAVL
IL
IL
t0 t1 t2 t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com 4


▲Up To Search▲   

 
Price & Availability of RURD660S

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X